Array substrate for liquid crystal display device and method of fabricating the same

ABSTRACT

An array substrate for a liquid crystal display device, includes: a gate line and a data line on a substrate, the data line crossing the gate line to define a pixel region; an insulating layer between the gate line and the data line; a switching element adjacent to a crossing of the gate line and the data line; a pixel electrode connected to the switching element, the pixel electrode disposed in the pixel region; and a first buffer pattern at a first side of one of the gate line and the date line and overlapped with the other one of the gate line and the date line, the first buffer pattern being disposed at the same layer as the one of the gate line and the date line.

This Nonprovisional Application claims priority under 35 U.S.C. §119(a)on Patent Application No. 10-2006-0044525 filed in Korea on May 18,2006, the entire contents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display (LCD) device,and more particularly to an array substrate of an LCD device and amethod of fabricating the same that can prevent disconnection of a topmetal line due to a step difference in a bottom metal line under the topmetal line and crossing the top metal line.

2. Discussion of the Related Art

Generally, LCD devices include first and second electrode bearingsubstrates coupled to, and spaced apart from each other by a layer ofliquid crystal material. LCD devices exploit anisotropic opticalproperties of the liquid crystal material and display images. Inparticular, electric fields generated when a voltage is applied to theelectrodes on the substrates can selectively manipulate the lighttransmittance characteristics of the liquid crystal material.

FIG. 1 is a schematic cross-sectional view of an LCD device according tothe related art.

In FIG. 1, an LCD device 11 includes upper and lower substrate 5 and 22facing and spaced apart from each other and a liquid crystal layer 14between the upper and lower substrates 5 and 22. Here, the upper andlower substrates 5 and 22 include pixel regions “P.” Specifically, thepixel region “P” of the upper substrate 5 and the pixel region “P” ofthe lower substrate 22 correspond to each other.

A color filter layer 7 including red (R), green (G) and blue (B)sub-color filters 7 a, 7 b and 7 c is formed on an inner surface of theupper substrate 5. A black matrix 6 is formed on the color filter layer7. Here, each of the red (R), green (G) and blue (B) sub-color filters 7a, 7 b and 7 c is disposed in the pixel region “P,” and the black matrix6 is disposed between the sub-color filters 7 a, 7 b and 7 c in anon-pixel region (not shown). Further, a common electrode 18 is formedon the black matrix 6 and the color filter layer 7.

A gate line 12 is formed on an inner surface of the lower substrate 22.A data line 24 is formed over the gate line 12 and crosses the gate line12 to define the pixel region “P.” A thin film transistor “T” isconnected to the gate line 12 and the data line 24. The thin filmtransistor “T” is adjacent to the crossing of the gate line 12 and thedata line 24. In addition, the thin film transistor “T” includes a gateelectrode 30, a semiconductor layer 32, and source and drain electrodes34 and 36. Further, a pixel electrode 17 is connected to the thin filmtransistor “T” in the pixel region “P.”

Specifically, the liquid crystal layer 14 is interposed between thecommon electrode 18 and the pixel electrode 17. Here, the liquid crystallayer 14 is pre-aligned by alignment layers (not shown) between thecommon electrode 18 and the liquid crystal layer 14 and between thepixel electrode 17 and the liquid crystal layer 14. In addition, thealignment layers are rubbed to help the pre-alignment of the liquidcrystal layer 14.

Meanwhile, when voltages are applied to the pixel electrode 17 and thecommon electrode 18, a vertical electric field between the pixelelectrode 17 and the common electrode 18 is generated. Therefore, animage can be displayed by varying the transmittance of light inaccordance with the vertical electric field.

During the manufacturing process, there are more defects in the processof forming the array substrate which includes the lower substrate 22,the gate line 12, the data line 24, the thin film transistor “T,” andthe pixel electrode 17 than in the process of forming the color filtersubstrate which includes the upper substrate 5, the color filter layer7, the black matrix 6 and the common electrode 18.

This is because more photolithography processes are performed to formthe array substrate. Accordingly, the number of defects of the arraysubstrate is much higher than that of the color filter substrate.Particularly, a top metal line, such as the data line 24, may be easilydisconnected at the crossing of a bottom metal line, such as the gateline 12, and the top metal line due to a step difference in the bottommetal line.

FIG. 2 is a schematic plan view of an array substrate with respect toone pixel region according to the related art.

In FIG. 2, an array substrate “AS” includes a gate line 52 and a dataline 62 crossing each other to define a pixel region “P,” a thin filmtransistor “T” adjacent to the crossing of the gate and data lines 52and 62, and a pixel electrode 64 connected to the thin film transistor“T” in the pixel region “P.”

Here, the gate line 52 and the data line 62 have a crossing portion“III.” In this crossing portion “III,” the data line 62 over the gateline 52 is frequently disconnected due to the step difference in thegate line 52.

Hereinafter, the disconnection defect at the crossing portion “III” ofthe gate and data lines 52 and 62 will be explained as follows.

FIG. 3 is an expanded plan view of “III” of FIG. 2. FIG. 4 is aschematic cross-sectional view taken along a line of “IV-IV” of FIG. 3.

In FIGS. 3 and 4, the gate line 52 and the data line 62 cross each otherwith a gate insulating layer (not shown) therebetween.

Generally, because the gate line 52 has a thickness of about 2,000˜3,000angstrom (Å), the data line 62 disposed over the gate line 52 has a sidestep difference in the gate line 52 having the above-noted thickness.More particularly, because the gate insulating layer (not shown) isgenerally made of a silicon nitride (SiNx) or silicon oxide (SiOx) andhas a thickness of about 3,000˜4,000 angstrom (Å), the gate insulatinglayer cannot offset the step difference in the gate line 52. Therefore,at the crossing portion “III” of the gate line 52 and the data line 62,the data line 62 is formed along the step difference in the gate line52.

Consequently, because the data line 62 is formed along the side stepdifference portion “SP” in the gate line 52, the data line 62 is easilydisconnected at the side step difference portion “SP” due to thedeposition defect or the like. Further, an etchant for etching the dataline 62 may pool in a concave portion at the side step differenceportion “SP.” Therefore, in the concave portion, the data line 62 may beexcessively etched. Accordingly, the data line 62 may be disconnected.

The disconnection defect reduces the productivity and increases themanufacturing cost.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an array substrate foran LCD device and a method of fabricating the same that substantiallyobviates one or more of the problems due to limitations anddisadvantages of the related art.

An advantage of the present invention provides an array substrate for anLCD device and a method of fabricating the same that can prevent thedisconnection defect of metal lines crossing each other.

Another advantage of the present invention provides an array substratefor an LCD device and a method of fabricating the same that can improveproductivity and reduce the manufacturing cost.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. These andother advantages of the invention will be realized and attained by thestructure particularly pointed out in the written description and claimshereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, an arraysubstrate for a liquid crystal display device, includes: a gate line anda data line on a substrate, the data line crossing the gate line todefine a pixel region; an insulating layer between the gate line and thedata line; a switching element adjacent to a crossing of the gate lineand the data line; a pixel electrode connected to the switching element,the pixel electrode disposed in the pixel region; and a first bufferpattern at a first side of one of the gate line and the date line andoverlapped with the other one of the gate line and the date line, thefirst buffer pattern being disposed at the same layer as the one of thegate line and the date line.

In one aspect of the present invention, a method of fabricating an arraysubstrate for a liquid crystal display device, as embodied, includes:forming one of a gate line and a date line, and a first buffer patternon a substrate, the first buffer pattern being formed at a first side ofthe one of the gate line and the date line; forming an insulating layeron the one of the gate line and the date line, and the first bufferpattern; forming the other one of the gate line and the date line on theinsulating layer, the other one of the gate line and the date linecrossing the one of the gate line and the date line to define a pixelregion, the other one of the gate line and the date line beingoverlapped with the first buffer pattern; forming a switching elementconnected to the gate line and the data line adjacent to a crossing ofthe gate line and the data line; and forming a pixel electrode connectedto the switching element, the pixel electrode being disposed in thepixel region.

In another aspect of the present invention, a crossing line structure ofa display device, as embodied, comprises: a first line on a substrate;an insulating layer on the first line; a second line on the insulatinglayer, the second line crossing the first line; and a first bufferpattern at a first side of the first line and overlapped with the secondline.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

In the drawings:

FIG. 1 is a schematic cross-sectional view of an LCD device according tothe related art;

FIG. 2 is a schematic plan view of an array substrate with respect toone pixel region according to the related art;

FIG. 3 is an expanded plan view of “III” of FIG. 2;

FIG. 4 is a schematic cross-sectional view taken along a line of “IV-IV”in FIG. 3;

FIG. 5 is a schematic plan view of a crossing portion of two metal linesof an array substrate including buffer patterns according to a firstembodiment of the present invention;

FIG. 6 is a schematic plan view of a crossing portion of two metal linesof an array substrate including buffer patterns according to a secondembodiment of the present invention;

FIG. 7 is a schematic plan view of an array substrate for an LCD deviceincluding first and second buffer patterns with respect to one pixelregion according to a first embodiment of the present invention;

FIG. 8 is a schematic plan view of an array substrate for an LCD deviceincluding first and second buffer patterns with respect to one pixelregion according to a second embodiment of the present invention;

FIGS. 9A, 9B, 9C and 9D are schematic cross-sectional views of an arraysubstrate for an LCD device taken along a line of “IX-IX” in FIG. 7 inaccordance with manufacturing steps according to an embodiments of thepresent invention; and

FIGS. 10A, 10B, 10C and 10D are schematic cross-sectional views of anarray substrate for an LCD device taken along a line of “X-X” in FIG. 7in accordance with manufacturing steps according to an embodiments ofthe present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Reference will now be made in detail to embodiments of the presentinvention, example of which is illustrated in the accompanying drawings.Wherever possible, similar reference numbers will be used throughout thedrawings to refer to the same or like parts.

Hereinafter, exemplary embodiments according to the present inventionwill be explained as follows.

FIG. 5 is a schematic plan view of a crossing portion of two metal linesof an array substrate including buffer patterns according to a firstembodiment of the present invention. FIG. 6 is a schematic plan view ofa crossing portion of two metal lines of an array substrate includingbuffer patterns according to a second embodiment of the presentinvention.

In FIG. 5, a first metal line 102 is formed along a first direction anda second metal line 110 is formed along a second direction crossing thefirst direction. Although not shown, an insulating layer is disposedbetween the first metal line 102 and the second metal line 110. Further,first and second buffer patterns 106 and 108 are formed at the samelayer as the first metal line 102. Here, the first buffer pattern 106has a bar shape spaced apart from the first metal line 102 and along thefirst direction. The second buffer pattern 108 extends from the firstmetal line 102. For example, the second buffer pattern 108 has a squarepattern as shown in FIG. 5. Specifically, the size of the second bufferpattern 108 is selected from a range so that the main portion of thesecond buffer pattern 108 could be covered by the second metal line 110.

Alternatively, in FIG. 6, first and second buffer patterns 152 and 154extend from a first metal line 150 along the second direction so as tobe overlapped with the second metal line 160. For example, the firstbuffer pattern 152 may have a triangular shape and the second bufferpattern 154 may have a square shape. In FIG. 6, the first and secondbuffer patterns 152 and 154 are symmetrically disposed with respect to acentral portion of the second metal line 160. However, in order toreduce the step difference of the first metal line 150, the first andsecond metal lines 150 and 160 may be disposed at the other positionswithin the range so that the second metal line 160 could cover the firstand second buffer patterns 152 and 154. That is, each of the first andsecond buffer patterns 150 and 160 can be selected from various shapesto reduce the step difference in the first metal line 150. In addition,although two buffer patterns are used in the illustrated embodiments,any number of buffer patterns can be used to reduce the step difference.For example, a single buffer pattern can be used at one side of thesecond metal line 160, or more than two buffer patterns can be used atone side or two sides of the second metal line 160.

Anyway, what the buffer patterns according to the present invention aredisposed at both sides of an upper metal line that overlapped with alower metal line may be proper in order to obtain effects according tothe present invention.

Further, what the etchant pools at the crossing of the first and secondmetal lines 150 and 160 is effectively prevented by the first and secondbuffer patterns 152 and 154.

FIG. 7 is a schematic plan view of an array substrate for an LCD deviceincluding first and second buffer patterns with respect to one pixelregion according to a first embodiment of the present invention. FIG. 8is a schematic plan view of an array substrate for an LCD deviceincluding first and second buffer patterns with respect to one pixelregion according to a second embodiment of the present invention.

In FIGS. 7 and 8, a gate line 202 is formed along a first direction on asubstrate 200. A data line 220 is formed along a second directioncrossing the first direction to define a pixel region “P.” Although notshown, a gate insulating layer is interposed between the gate and datalines 202 and 220. A thin film transistor “T,” which includes a gateelectrode 204, a semiconductor layer 214, a source electrode 216 and adrain electrode 218, is adjacent to the crossing of the gate and datalines 202 and 220. A pixel electrode 226 is connected to the thin filmtransistor “T” in the pixel region “P.” Further, the first and secondbuffer patterns 206 and 208 (of FIG. 7) or 306 and 308 (of FIG. 8) areformed at the same layer as the gate line 202.

In FIG. 7, the first buffer pattern 206 has a bar shape spaced apartfrom the gate line 202 and along a direction parallel to the firstdirection. The second buffer pattern 208 extends from the gate line 202along the second direction so that the main portion of the second bufferpattern 208 is overlapped with the data line 220.

Alternatively, in FIG. 8, the first and second buffer patterns 306 and308 extend from the gate line 202. Here, each of the first and secondbuffer patterns 306 and 308 extends toward a direction opposite to eachother. Specifically, the first buffer pattern 306 has a triangular shapeand the second buffer pattern 308 has a square shape. However, theshapes of the first and second buffer patterns 306 and 308 may bechanged into different types.

Hereinafter, a manufacturing process of an array substrate for an LCDdevice according to an embodiment of the present invention will beexplained as follows.

FIGS. 9A, 9B, 9C and 9D are schematic cross-sectional views of an arraysubstrate for an LCD device taken along a line of “IX-IX” in FIG. 7 inaccordance with manufacturing steps according to an embodiments of thepresent invention. FIGS. 10A, 10B, 10C and 10D are schematiccross-sectional views of an array substrate for an LCD device takenalong a line of “X-X” in FIG. 7 in accordance with manufacturing stepsaccording to an embodiments of the present invention.

In FIGS. 9A and 10A, a substrate 200 includes a pixel region “P” and aswitching region “S.” A conductive metallic material is deposited thesubstrate 200 and is patterned to form a gate line 202 and a gateelectrode 204. Although not shown, the gate line 202 is formed along afirst direction and the gate electrode 204 is disposed in the switchingregion “S.”

Further, a first buffer pattern 206 is formed to be spaced from the gateline 202, and a second buffer pattern 208 extends from the gate line202. Although not shown, the first buffer pattern 206 has a bar shapeparallel to the first direction, and the second buffer pattern 208 has asquare shape in a plan view. Specifically, the first and second bufferpatterns 206 and 208 are disposed in a crossing portion of the gate line202 and a data line that will be formed later.

However, the first and second buffer patterns 206 and 208 may be changedinto various shapes.

The conductive metallic material is selected from aluminum (Al),aluminum alloy such as aluminum neodymium (AlNd), chromium (Cr),tungsten (W), molybdenum (Mo) and titanium (Ti) and the like.

Next, a gate insulating layer is formed by depositing an inorganicinsulating layer such as silicon nitride (SiNx) or silicon oxide (SiOx)on the gate line 202, the gate electrode 204, and the first and secondbuffer patterns 206 and 208.

In FIGS. 9B and 10B, a semiconductor layer 214 is formed by sequentiallydepositing an intrinsic amorphous silicon (a-Si: H) and a dopedamorphous silicon (n+ a-Si: H) on the gate insulating layer.Specifically, the intrinsic amorphous silicon (a-Si: H) and the dopedamorphous silicon (n+ a-Si: H) are patterned into an active layer 214 aand an ohmic contact layer 214 b, respectively. That is, thesemiconductor layer 214 includes the active layer 214 a and the ohmiccontact layer 214 b.

Next, a data line 220, a source electrode 216 and a drain electrode 218are formed by depositing and patterning a conductive metallic materialsuch as the mentioned conductive metallic material on the semiconductorlayer 214. Specifically, the data line 220 is formed along a seconddirection crossing the first direction, the source electrode 216 extendsfrom the data line 220, and the drain electrode 218 is spaced apart fromthe source electrode 216. A portion of the active layer 214 a is exposedbetween the source and drain electrode 216 and 218. The gate electrode204, the semiconductor layer 214, the source electrode 216 and the drainelectrode 218 constitute a thin film transistor “T.”

It is noted that the data line 220 crosses the gate line 202 and coversthe first and second buffer patterns 206 and 208. Therefore, the stepdifference in the gate line 202 can be reduced by the first and secondbuffer patterns 206 and 208. Accordingly, the disconnection defect fromthe data line 220 can be prevented.

In FIGS. 9C and 10C, a passivation layer 222 is formed by depositing (orcoating) and patterning an inorganic insulating material such as siliconnitride (SiNx) or silicon oxide (SiOx) or an organic insulating materialsuch as benzocyclobutene (BCB) or acrylic resin on the thin filmtransistor “T.” Here, the passivation layer 222 includes a drain contacthole 224 that exposes a portion of the drain electrode 218 through thepatterning process.

In FIGS. 9D and 10D, a pixel electrode 226 is formed by depositing andpatterning a transparent conductive material such as indium tin oxide(ITO), indium zinc oxide (IZO) on the passivation layer 222 in the pixelregion “P.” Here, the pixel electrode 226 is connected to the drainelectrode 218 via the drain contact hole 224.

The first and second buffer patterns 206 and 208 according to anembodiment of the present invention can prevent disconnection defect atthe crossing of two metal lines such as gate and data lines 202 and 220,thereby improving productivity and reducing the manufacturing cost.

Although the above embodiments use a bottom-gate TFT structure as anexample and apply the present invention to prevent the disconnectiondefect of the date line due to the step difference of the gate line, itshould be noted that the present invention can also be applied to anycrossing line structure. For example, the present invention can also beapplied to a top-gate TFT structure to prevent the disconnection defectof the gate line due to the step difference of the date line, or anyother crossing line structure to prevent the disconnection defect of theupper line due to the step difference of the lower line.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1. An array substrate for a liquid crystal display device, comprising: agate line and a data line on a substrate, the data line crossing thegate line to define a pixel region; an insulating layer between the gateline and the data line; a switching element adjacent to a crossing ofthe gate line and the data line; a pixel electrode connected to theswitching element, the pixel electrode disposed in the pixel region; anda first buffer pattern at a first side of one of the gate line and thedate line and overlapped with the other one of the gate line and thedate line, the first buffer pattern being disposed at the same layer asthe one of the gate line and the date line.
 2. The array substrateaccording to claim 1, wherein a second buffer pattern at a second sideof the one of the gate line and the date line opposite to the first sideand overlapped with the other one of the gate line and the date line,the first and second buffer patterns being disposed at the same layer asthe one of the gate line and the date line.
 3. The array substrateaccording to claim 2, wherein the first buffer pattern has a bar shapeparallel to and spaced apart from the one of the gate line and the dateline, and the second buffer pattern extends from the one of the gateline and the date line.
 4. The array substrate according to claim 3,wherein the second buffer pattern is closer than the first bufferpattern to the switching element.
 5. The array substrate according toclaim 3, wherein the second buffer pattern has one of a tetragonal shapeand a triangular shape.
 6. The array substrate according to claim 2,wherein the first and second buffer patterns and the one of the gateline and the date line are substantially coplanar.
 7. The arraysubstrate according to claim 2, wherein the first and second bufferpatterns and the one of the gate line and the date line are made of asubstantially same material.
 8. The array substrate according to claim2, wherein the first buffer pattern extends from the first side of theone of the gate line and the date line, and the second buffer patternextends from the second side of the gate line.
 9. The array substrateaccording to claim 8, wherein the first and second buffer patterns aresymmetrically disposed with respect to a central portion of the otherone of the gate line and the date line.
 10. A method of fabricating anarray substrate for a liquid crystal display device, comprising: formingone of a gate line and a date line, and a first buffer pattern on asubstrate, the first buffer pattern being formed at a first side of theone of the gate line and the date line; forming an insulating layer onthe one of the gate line and the date line, and the first bufferpattern; forming the other one of the gate line and the date line on theinsulating layer, the other one of the gate line and the date linecrossing the one of the gate line and the date line to define a pixelregion, the other one of the gate line and the date line beingoverlapped with the first buffer pattern; forming a switching elementconnected to the gate line and the data line adjacent to a crossing ofthe gate line and the data line; and forming a pixel electrode connectedto the switching element, the pixel electrode being disposed in thepixel region.
 11. The method according to claim 10, further comprisingforming a second buffer pattern at a second side of the one of the gateline and the date line opposite to the first side, the other one of thegate line and the date line being overlapped with the second bufferpattern, wherein the step of forming the insulating layer includesforming the insulating layer on the second buffer pattern.
 12. Themethod according to claim 11, wherein the steps of forming the one ofthe gate line and the date line, the first buffer pattern and the secondbuffer pattern include forming the first buffer pattern to have a barshape parallel to and spaced apart from the one of the gate line and thedate line, and forming the second buffer pattern to extend from the oneof the gate line and the date line.
 13. The method according to claim12, wherein the steps of forming the one of the gate line and the dateline, the first buffer pattern and the second buffer pattern includeforming the second buffer pattern to have one of a tetragonal shape anda triangular shape.
 14. The method according to claim 11, wherein thesteps of forming the one of the gate line and the date line, the firstbuffer pattern and the second buffer pattern include forming the firstand second buffer patterns and the one of the gate line and the dateline to be substantially coplanar.
 15. The method according to claim 11,wherein the steps of forming the one of the gate line and the date line,the first buffer pattern and the second buffer pattern include formingthe first and second buffer patterns and the one of the gate line andthe date line of a substantially same material.
 16. The method accordingto claim 11, wherein the steps of forming the one of the gate line andthe date line, the first buffer pattern and the second buffer patterninclude: forming the first buffer pattern to extend from the first sideof the one of the gate line and the date line; and forming the secondbuffer pattern to extend from the second side of the one of the gateline and the date line.
 17. The method according to claim 16, whereinthe steps of forming the one of the gate line and the date line, thefirst buffer pattern and the second buffer pattern include forming thefirst and second buffer patterns to be symmetrical to a central portionof the other one of the gate line and the date line.
 18. A crossing linestructure of a display device, comprising: a first line on a substrate;an insulating layer on the first line; a second line on the insulatinglayer, the second line crossing the first line; and a first bufferpattern at a first side of the first line and overlapped with the secondline;
 19. The crossing line structure according claim 18, furthercomprising a second buffer pattern at a second side of the first lineopposite to the first side and overlapped with the second line.
 20. Thecrossing line structure according claim 19, wherein the first and secondbuffer patterns are disposed at the same layer as the first line. 21.The crossing line structure according claim 20, wherein the first andsecond buffer patterns and the first line are substantially coplanar.22. The crossing line structure according claim 20, wherein the firstand second buffer patterns and the first line are made of asubstantially same material.
 23. The crossing line structure accordingclaim 19, wherein the first buffer pattern has a bar shape parallel toand spaced apart from the first line, and the second buffer patternextends from the first line.
 24. The crossing line structure accordingclaim 23, wherein the second buffer pattern has one of a tetragonalshape and a triangular shape.
 25. The crossing line structure accordingclaim 19, wherein the first buffer pattern extends from the first sideof the first line, and the second buffer pattern extends from the secondside of the first line.
 26. The crossing line structure according claim25, wherein the first and second buffer patterns are symmetricallydisposed with respect to a central portion of the second line.